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RZR020P01
Data Sheet
10
V GS =0V
Pulsed
500
Ta=25°C
Pulsed
1000
t d (off)
Ta=25°C V DD = -6V
V GS =-4.5V R G =10 ?
400
t f
Pulsed
1
300
I D = -1A
100
I D = -2A
Ta=125°C
200
0.1
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
t d (on)
t r
0.01
0
1
0
0.5
1
1.5
0
2
4
6
8
10
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I D [A]
Fig.12 Switching Characteristics
5
10000
Ta=25°C
f=1MHz
4
3
2
1000
V GS =0V
Ciss
Coss
1
Ta=25°C
V DD = -6V
I D = -2.0A
100
Crss
R G = 10 ?
0
Pulsed
10
0
1
2
3
4
5
6
7
8
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V DS [V]
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
Measurement circuit
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
V GS
I D
R L
V DS
V GS
Pulse width
10%
50%
50%
90%
R G
D.U.T.
V DD
10%
10%
V DS
t d(on)
90%
t r
t d(off)
90%
t f
t on
t off
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
I G (Const.)
V GS
I D
D.U.T.
R L
V DS
V G
V GS
Q g
R G
V DD
Q gs
Q gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.03 - Rev.A
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